JPH0153514B2 - - Google Patents

Info

Publication number
JPH0153514B2
JPH0153514B2 JP56148217A JP14821781A JPH0153514B2 JP H0153514 B2 JPH0153514 B2 JP H0153514B2 JP 56148217 A JP56148217 A JP 56148217A JP 14821781 A JP14821781 A JP 14821781A JP H0153514 B2 JPH0153514 B2 JP H0153514B2
Authority
JP
Japan
Prior art keywords
region
oxide film
yield
transistor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56148217A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5850773A (ja
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56148217A priority Critical patent/JPS5850773A/ja
Publication of JPS5850773A publication Critical patent/JPS5850773A/ja
Publication of JPH0153514B2 publication Critical patent/JPH0153514B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56148217A 1981-09-19 1981-09-19 半導体集積回路装置 Granted JPS5850773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56148217A JPS5850773A (ja) 1981-09-19 1981-09-19 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56148217A JPS5850773A (ja) 1981-09-19 1981-09-19 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5850773A JPS5850773A (ja) 1983-03-25
JPH0153514B2 true JPH0153514B2 (en]) 1989-11-14

Family

ID=15447886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56148217A Granted JPS5850773A (ja) 1981-09-19 1981-09-19 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5850773A (en])

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52124880A (en) * 1976-04-14 1977-10-20 Hitachi Ltd Semiconductor device
JPS5593258A (en) * 1978-12-30 1980-07-15 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5850773A (ja) 1983-03-25

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